MPS3563
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Bulk Through Hole NPN SINGLE RF Transistor 20 @ 8mA 10V 50mA 350W 14dB @ 200MHz
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
Terminal Finish TIN LEAD
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 350W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8mA 10V
Gain 14dB @ 200MHz
Voltage - Collector Emitter Breakdown (Max) 12V
Current - Collector (Ic) (Max) 50mA
Transition Frequency 1500MHz
Frequency - Transition 1.5GHz
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 1.7pF
Noise Figure (dB Typ @ f) 6.5dB @ 60MHz
Compliance
RoHS Status Non-RoHS Compliant
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