HFA3127R
RoHS
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Package 16-VFQFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Tube Surface Mount NPN SEPARATE 5ELEMENTS RF Transistor 40 @ 10mA 2V 65mA 150mW 8GHz
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case 16-VFQFN Exposed Pad
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature 175°C TJ
Packaging Tube
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 16
Terminal Finish TIN LEAD
Additional Feature LOW NOISE
Terminal Position QUAD
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 240
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 16
JESD-30 Code S-PQCC-N16
Qualification Status COMMERCIAL
Number of Elements 5
Configuration SEPARATE, 5 ELEMENTS
Power - Max 150mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type 5 NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 2V
JEDEC-95 Code MO-220VEED-2
Voltage - Collector Emitter Breakdown (Max) 12V
Current - Collector (Ic) (Max) 65mA
Transition Frequency 8000MHz
Frequency - Transition 8GHz
Highest Frequency Band ULTRA HIGH FREQUENCY B
Noise Figure (dB Typ @ f) 3.5dB @ 1GHz
Compliance
RoHS Status Non-RoHS Compliant
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