DSA9G01C0L
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Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Bipolar Transistors - BJT Bipolar Power Transistor
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Technical Details
Physical
Mount Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Technical
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
HTS Code 8541.21.00.75
Max Power Dissipation 125mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Application AMPLIFIER
Collector Emitter Voltage (VCEO) -20V
Max Collector Current 30mA
Max Frequency 300MHz
Transition Frequency 300MHz
Collector Emitter Saturation Voltage -100mV
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) -5V
hFE Min 70
DC Current Gain-Min (hFE) 110
Continuous Collector Current -30mA
Dimensions
Height 600μm
Length 1.6mm
Width 850μm
Compliance
RoHS Status RoHS Compliant
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