MSD2714AT1G
RoHS
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Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Bipolar Transistors - BJT 25V VHF/UHF NPN
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Collector-Base Capacitance-Max 0.7pF
Highest Frequency Band ULTRA HIGH FREQUENCY B
hFE Min 90
Emitter Base Voltage (VEBO) 3V
Collector Base Voltage (VCBO) 30V
Transition Frequency 650MHz
Collector Emitter Breakdown Voltage 25V
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 1mA 6V
Collector Emitter Voltage (VCEO) 25V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 650MHz
Power - Max 225mW
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 40
Current Rating 4mA
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position DUAL
Max Power Dissipation 225mW
Voltage - Rated DC 25V
Subcategory BIP RF Small Signal
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2006
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Alternative Model
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