Noise Figure (dB Typ @ f) 6dB @ 200MHz
Collector-Base Capacitance-Max 0.9pF
Highest Frequency Band VERY HIGH FREQUENCY B
Emitter Base Voltage (VEBO) 3V
Collector Base Voltage (VCBO) 20V
Collector Emitter Saturation Voltage 500mV
Transition Frequency 800MHz
Collector Emitter Breakdown Voltage 15V
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 5mA 10V
Collector Emitter Voltage (VCEO) 15V
Polarity/Channel Type NPN
Gain Bandwidth Product 800MHz
Transistor Application AMPLIFIER
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 350mW
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ