Noise Figure (dB Typ @ f) 6dB @ 200MHz
Collector-Base Capacitance-Max 0.9pF
Highest Frequency Band VERY HIGH FREQUENCY B
Emitter Base Voltage (VEBO) 3V
Collector Base Voltage (VCBO) 20V
Max Breakdown Voltage 15V
Collector Emitter Saturation Voltage 500mV
Transition Frequency 800MHz
Collector Emitter Breakdown Voltage 15V
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 5mA 10V
Collector Emitter Voltage (VCEO) 15V
Polarity/Channel Type NPN
Gain Bandwidth Product 800MHz
Transistor Application AMPLIFIER
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Max Power Dissipation 350mW
Subcategory Other Transistors
Terminal Finish Tin/Lead (Sn/Pb)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ