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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description Bulk Through Hole NPN Single RF Transistor 60 @ 4mA 10V 50mA 350mW 650MHz
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Total Price: USD $0.05
Unit Price: USD $0.0528
≥1 USD $0.0528
Inventory: 1263
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant

Dimensions

Width 6.35mm
Length 6.35mm
Height 6.35mm

Technical

Collector-Base Capacitance-Max 0.7pF
Continuous Collector Current 50mA
hFE Min 60
Emitter Base Voltage (VEBO) 3V
Collector Base Voltage (VCBO) 30V
Transition Frequency 650MHz
Collector Emitter Breakdown Voltage 25V
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA 10V
Max Collector Current 50mA
Collector Emitter Voltage (VCEO) 25V
Transistor Type NPN
Polarity/Channel Type NPN
Output Power 50mW
Power Dissipation 350mW
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Frequency 650MHz
Current Rating 50mA
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position BOTTOM
Max Power Dissipation 350mW
Voltage - Rated DC 25V
Subcategory Other Transistors
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Packaging Bulk
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 195mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 36 Weeks

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