MPSH10RLRAG
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Bipolar Transistors - BJT 25V VHF/UHF NPN
PDF
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Buying Options
Total Price: USD $0.02
Unit Price: USD $0.01995
≥1 USD $0.01995
≥10 USD $0.01615
≥100 USD $0.01615
≥500 USD $0.0152
≥1000 USD $0.0152
≥10000 USD $0.0133
Inventory: 8005
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Physical
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 25V
Max Power Dissipation 350mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 4mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MPSH10
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power - Max 350mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 650MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA 10V
Collector Emitter Breakdown Voltage 25V
Transition Frequency 650MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 3V
hFE Min 60
Collector Current-Max (IC) 0.1A
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 0.7pF
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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