Collector-Base Capacitance-Max 0.7pF
Emitter Base Voltage (VEBO) 3V
Collector Base Voltage (VCBO) 30V
Collector Emitter Saturation Voltage 500mV
Transition Frequency 650MHz
Collector Emitter Breakdown Voltage 25V
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA 10V
Collector Emitter Voltage (VCEO) 25V
Polarity/Channel Type NPN
Gain Bandwidth Product 650MHz
Transistor Application AMPLIFIER
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 350W
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ