Emitter Base Voltage (VEBO) 2.5V
Collector Base Voltage (VCBO) 20V
Collector Emitter Saturation Voltage 400mV
Transition Frequency 900MHz
Collector Emitter Breakdown Voltage 12V
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA 1V
Max Collector Current 50mA
Collector Emitter Voltage (VCEO) 12V
Polarity/Channel Type NPN
Gain Bandwidth Product 2 GHz
Transistor Application AMPLIFIER
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 200mW
Subcategory Other Transistors
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)