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RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description Bipolar Transistors - BJT 50mA 12V High Frequency NPN
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant

Technical

hFE Min 25
Emitter Base Voltage (VEBO) 2.5V
Collector Base Voltage (VCBO) 20V
Collector Emitter Saturation Voltage 400mV
Transition Frequency 900MHz
Collector Emitter Breakdown Voltage 12V
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA 1V
Max Collector Current 50mA
Collector Emitter Voltage (VCEO) 12V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 2 GHz
Transistor Application AMPLIFIER
Power Dissipation 200W
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number MPS5179
Time@Peak Reflow Temperature-Max (s) 40
Frequency 2GHz
Current Rating 50mA
Peak Reflow Temperature (Cel) 260
Terminal Position BOTTOM
Max Power Dissipation 200mW
Voltage - Rated DC 12V
Subcategory Other Transistors
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e1
Published 2006
Packaging Bulk

Physical

Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole

Alternative Model

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