MPS3563
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
RF TRANS NPN 12V 1.5GHZ TO92
PDF
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Buying Options
Total Price: USD $0.17
Unit Price: USD $0.173985
≥1 USD $0.173985
≥10 USD $0.164139
≥100 USD $0.154848
≥500 USD $0.146086
≥1000 USD $0.13781
Inventory: 1248
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
Noise Figure (dB Typ @ f) 6.5dB @ 60MHz
Collector-Base Capacitance-Max 1.7pF
Highest Frequency Band ULTRA HIGH FREQUENCY B
hFE Min 20
Emitter Base Voltage (VEBO) 2V
Collector Base Voltage (VCBO) 30V
Collector Emitter Saturation Voltage 400mV
Transition Frequency 1500MHz
Gain 14dB @ 200MHz
Collector Emitter Breakdown Voltage 12V
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8mA 10V
Max Collector Current 50mA
Collector Emitter Voltage (VCEO) 12V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 1.5 GHz
Transistor Application AMPLIFIER
Power Dissipation 850mW
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-PBCY-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 50mA
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Terminal Position BOTTOM
Max Power Dissipation 350W
Voltage - Rated DC 12V
Subcategory Other Transistors
HTS Code 8541.21.00.75
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Published 2006
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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