Noise Figure (dB Typ @ f) 5dB @ 200MHz
Continuous Collector Current 50mA
Emitter Base Voltage (VEBO) 2.5V
Collector Base Voltage (VCBO) 20V
Max Breakdown Voltage 12V
Transition Frequency 900MHz
Collector Emitter Breakdown Voltage 12V
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA 1V
Max Collector Current 50mA
Collector Emitter Voltage (VCEO) 12V
Polarity/Channel Type NPN
Gain Bandwidth Product 2 GHz
Transistor Application AMPLIFIER
Element Configuration Single
Base Part Number MMBT5179
Max Power Dissipation 225mW
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ