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RoHS
RoHS RoHS compliant
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description NPN 1 W 25 V Through Hole Epitaxial Silicon Transistor - TO-92-3
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Buying Options
Total Price: USD $0.04
Unit Price: USD $0.0352
≥1 USD $0.0352
Inventory: 14313
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No

Dimensions

Width 3.86mm
Length 4.58mm
Height 4.58mm

Technical

Collector-Base Capacitance-Max 0.7pF
hFE Min 60
Emitter Base Voltage (VEBO) 3V
Collector Base Voltage (VCBO) 30V
Max Breakdown Voltage 25V
Collector Emitter Saturation Voltage 500mV
Transition Frequency 650MHz
Collector Emitter Breakdown Voltage 25V
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA 10V
Max Collector Current 4mA
Collector Emitter Voltage (VCEO) 25V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 650MHz
Power Dissipation 350mW
Element Configuration Single
Number of Elements 1
Base Part Number KSP10
Frequency 650MHz
Current Rating 100mA
Terminal Position BOTTOM
Max Power Dissipation 350mW
Voltage - Rated DC 25V
Subcategory Other Transistors
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2002
Packaging Tape & Box (TB)
Operating Temperature 150°C TJ

Physical

Transistor Element Material SILICON
Weight 240mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 7 Weeks

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