UTV8100B
RoHS
/
Package 55RT
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Trans GP BJT NPN 30V 15A 5-Pin Case 55RT-2
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector Base Voltage (VCBO) 65V
Frequency - Transition 470MHz~860MHz
Max Frequency 860MHz
Gain 8.5dB ~ 9.5dB
Collector Emitter Breakdown Voltage 60V
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A 5V
Max Collector Current 15A
Collector Emitter Voltage (VCEO) 30V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Configuration COMMON EMITTER, 2 ELEMENTS
Number of Elements 2
JESD-30 Code R-CDFM-F4
Pin Count 4
Terminal Form FLAT
Terminal Position DUAL
Max Power Dissipation 290W
Additional Feature HIGH RELIABILITY
Terminal Finish TIN LEAD
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Published 1997
Packaging Bulk
Operating Temperature 200°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 55
Package / Case 55RT
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Supply Chain
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 13 Weeks
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