UTV200
RoHS
/
Package 55JV
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
RF TRANS NPN 28V 860MHZ 55JV
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Technical Details
Supply Chain
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Physical
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case 55JV
Number of Pins 55
Transistor Element Material SILICON
Technical
Operating Temperature 200°C TJ
Packaging Bulk
Published 1996
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish TIN LEAD
Additional Feature HIGH RELIABILITY
Max Power Dissipation 80W
Terminal Position DUAL
Terminal Form FLAT
Pin Count 4
JESD-30 Code R-CDFM-F4
Number of Elements 2
Configuration COMMON EMITTER, 2 ELEMENTS
Power - Max 80W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 1A 5V
Collector Emitter Breakdown Voltage 28V
Gain 8.5dB ~ 9.5dB
Frequency - Transition 470MHz~860MHz
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 36pF
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
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