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Package 55HV
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description Trans GP BJT NPN 33V 3A 3-Pin Case 55HV-2
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Technical Details

Supply Chain

Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case 55HV
Number of Pins 55
Transistor Element Material SILICON

Technical

Operating Temperature 200°C TJ
Packaging Bulk
Published 1998
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish TIN LEAD
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 70W
Terminal Position UNSPECIFIED
Terminal Form FLAT
Pin Count 6
JESD-30 Code O-CXFM-F6
Number of Elements 1
Configuration SINGLE
Case Connection EMITTER
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 33V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 500mA 5V
Collector Emitter Breakdown Voltage 33V
Gain 8.9db ~ 10dB
Max Frequency 400MHz
Frequency - Transition 225MHz~400MHz
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 27pF

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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