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Package 55CX
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description RF TRANS NPN 55V 1.09GHZ 55CX
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Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case 55CX
Number of Pins 55
Transistor Element Material SILICON

Technical

Operating Temperature 200°C TJ
Packaging Bulk
Published 1996
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Power Dissipation 290W
Terminal Position DUAL
Terminal Form FLAT
Pin Count 2
JESD-30 Code R-CDFM-F2
Number of Elements 1
Configuration SINGLE
Power - Max 290W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 55V
Max Collector Current 9A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 20mA 5V
Collector Emitter Breakdown Voltage 55V
Gain 8dB ~ 9dB
Frequency - Transition 1.03GHz~1.09GHz
Highest Frequency Band L B

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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