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RoHS
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Package 55AZ
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description RF TRANS NPN 50V 1.215GHZ 55AZ
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Technical

Highest Frequency Band L B
Frequency - Transition 960MHz~1.215GHz
Max Frequency 1.215GHz
Gain 8dB ~ 8.5dB
Collector Emitter Breakdown Voltage 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 15mA 5V
Max Collector Current 9A
Collector Emitter Voltage (VCEO) 50V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Output Power 80W
Configuration SINGLE
Number of Elements 1
JESD-30 Code R-CDFM-F2
Pin Count 2
Terminal Form FLAT
Terminal Position DUAL
Max Power Dissipation 290W
Terminal Finish TIN LEAD
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Published 1996
Packaging Bulk
Operating Temperature 200°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 55
Package / Case 55AZ
Mounting Type Chassis Mount
Mount Chassis Mount, Screw

Supply Chain

Factory Lead Time 12 Weeks

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