SD1224
RoHS
/
Package M135
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
RF TRANS NPN 35V 175MHZ M135
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Inventory: 1991
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Collector-Base Capacitance-Max 65pF
Highest Frequency Band VERY HIGH FREQUENCY B
Collector Base Voltage (VCBO) 65V
Frequency - Transition 175MHz
Max Frequency 175MHz
Gain 7.6dB
Collector Emitter Breakdown Voltage 35V
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA 5V
Max Collector Current 5A
Collector Emitter Voltage (VCEO) 35V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Configuration SINGLE
Number of Elements 1
Pin Count 4
Terminal Form FLAT
Terminal Position RADIAL
Max Power Dissipation 60W
Subcategory Other Transistors
Additional Feature WITH EMITTER BALLASTED RESISTORS
Terminal Finish TIN LEAD
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Published 2003
Packaging Bulk
Operating Temperature 200°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 4
Package / Case M135
Mounting Type Chassis Mount
Mount Chassis Mount, Stud
Supply Chain
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
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