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Package M135
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description RF TRANS NPN 18V 150MHZ M135
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Technical Details

Physical

Mounting Type Stud Mount
Package / Case M135
Surface Mount NO
Transistor Element Material SILICON

Compliance

RoHS Status Non-RoHS Compliant

Technical

Collector-Base Capacitance-Max 250pF
Highest Frequency Band VERY HIGH FREQUENCY B
Power Dissipation-Max (Abs) 40W
Frequency - Transition 150MHz
Transition Frequency 108MHz
Current - Collector (Ic) (Max) 1A
Voltage - Collector Emitter Breakdown (Max) 18V
Gain 10dB
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 200mA 5V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Power - Max 10W
Configuration SINGLE WITH BUILT-IN RESISTOR
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-PRPM-F4
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form FLAT
Terminal Position RADIAL
Subcategory Other Transistors
Additional Feature WITH EMITTER BALLAST RESISTOR
Terminal Finish TIN LEAD
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Published 2003
Packaging Bulk
Operating Temperature 200°C

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