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Package M218
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description RF TRANS NPN 65V 1.15GHZ M218
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

Highest Frequency Band L B
Frequency - Transition 1.025GHz~1.15GHz
Transition Frequency 1025MHz
Current - Collector (Ic) (Max) 12A
Gain 8dB
Collector Emitter Breakdown Voltage 65V
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A 5V
Max Collector Current 12A
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Case Connection BASE
Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code S-CDFM-F2
Pin Count 2
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form FLAT
Terminal Position DUAL
Max Power Dissipation 400W
Subcategory Other Transistors
Terminal Finish TIN LEAD
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Packaging Bulk
Operating Temperature 250°C TJ

Physical

Transistor Element Material SILICON
Package / Case M218
Mounting Type Chassis Mount
Mount Chassis Mount

Supply Chain

Factory Lead Time 13 Weeks

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