MS652S
RoHS
/
Package M123
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
RF TRANS NPN 16V 512MHZ M123
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Collector-Base Capacitance-Max 15pF
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector Base Voltage (VCBO) 36V
Frequency - Transition 450MHz~512MHz
Gain 10dB
Collector Emitter Breakdown Voltage 16V
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 200mA 5V
Max Collector Current 2A
Collector Emitter Voltage (VCEO) 16V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Power - Max 25W
Configuration SINGLE
Number of Elements 1
Pin Count 4
Terminal Form FLAT
Terminal Position RADIAL
Max Power Dissipation 25W
Subcategory Other Transistors
Terminal Finish TIN LEAD
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Published 2003
Packaging Bulk
Operating Temperature 200°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 4
Package / Case M123
Mounting Type Chassis Mount
Mount Chassis Mount, Surface Mount
Supply Chain
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
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