MS2473
RoHS
/
Package M112
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Trans GP BJT 46A 3-Pin Case M-112
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Highest Frequency Band L B
Collector Base Voltage (VCBO) 65V
Frequency - Transition 1.09GHz
Gain 6dB
Collector Emitter Breakdown Voltage 65V
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 1A 5V
Max Collector Current 46A
Transistor Type NPN
Polarity/Channel Type NPN
Power - Max 2300W
Case Connection BASE
Configuration SINGLE
Number of Elements 1
JESD-30 Code R-CDFM-F2
Pin Count 2
Terminal Form FLAT
Terminal Position DUAL
Max Power Dissipation 2.3kW
Subcategory Other Transistors
Terminal Finish TIN LEAD
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Published 2016
Packaging Bulk
Operating Temperature 200°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case M112
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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