MS2472
RoHS
/
Package M112
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Trans GP BJT NPN 65V 40A 3-Pin Case M-112
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Buying Options
Total Price: USD $715.94
Unit Price: USD $715.9428
≥1 USD $715.9428
Inventory: 32
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Highest Frequency Band L B
Collector Base Voltage (VCBO) 65V
Frequency - Transition 1.025GHz~1.15GHz
Gain 5.6dB
Collector Emitter Breakdown Voltage 65V
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 250mA 5V
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 65V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Power - Max 1350W
Output Power 550W
Case Connection BASE
Configuration SINGLE
Number of Elements 1
JESD-30 Code R-CDFM-F2
Pin Count 2
Terminal Form FLAT
Terminal Position DUAL
Max Power Dissipation 1.35kW
Subcategory Other Transistors
Terminal Finish TIN LEAD
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Published 2004
Packaging Bulk
Operating Temperature 200°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case M112
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
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