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Package M105
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description Trans GP BJT NPN 65V 1.5A 3-Pin Case M105
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Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case M105
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature 200°C TJ
Packaging Bulk
Published 2004
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Highest Frequency Band L B
Collector Base Voltage (VCBO) 65V
Frequency - Transition 1.025GHz~1.15GHz
Gain 10dB
Collector Emitter Breakdown Voltage 65V
Max Collector Current 1.5A
Collector Emitter Voltage (VCEO) 65V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Power - Max 87.5W
Output Power 15W
Case Connection BASE
Configuration SINGLE
Number of Elements 1
JESD-30 Code S-CDFM-F2
Pin Count 2
Terminal Form FLAT
Terminal Position DUAL
Max Power Dissipation 87.5W
Subcategory Other Transistors
Terminal Finish TIN LEAD
ECCN Code EAR99
Number of Terminations 2

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

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