MS2212
RoHS
/
Package M222
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Trans GP BJT NPN 0.002A 4-Pin Case M222
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Technical Details
Physical
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case M222
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature 250°C TJ
Packaging Bulk
Published 2004
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish TIN LEAD
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 50W
Terminal Position DUAL
Terminal Form FLAT
Pin Count 2
JESD-30 Code S-CDFM-F2
Number of Elements 1
Configuration SINGLE
Case Connection BASE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Max Collector Current 1.8A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 500mA 5V
Collector Emitter Breakdown Voltage 55V
Gain 8.1dB ~ 8.9dB
Max Frequency 1.215GHz
Frequency - Transition 960MHz~1.215GHz
Collector Base Voltage (VCBO) 55V
Highest Frequency Band L B
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
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