MS2209
RoHS
/
Package M218
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Trans GP BJT NPN 7A 4-Pin Case M218
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Technical Details
Physical
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case M218
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature 200°C TJ
Packaging Bulk
Published 2008
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Power Dissipation 220W
Terminal Position DUAL
Terminal Form FLAT
Frequency 225MHz
JESD-30 Code S-CDFM-F2
Number of Elements 1
Configuration SINGLE
Power Dissipation 220W
Case Connection BASE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Max Collector Current 7A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 2A 5V
Collector Emitter Breakdown Voltage 65V
Gain 8.4dB
Current - Collector (Ic) (Max) 7A
Collector Base Voltage (VCBO) 65V
Emitter Base Voltage (VEBO) 3V
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
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