MS2202
RoHS
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Package M115
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Trans GP BJT NPN 0.25A 4-Pin Case M115
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Technical Details
Physical
Mount Chassis Mount, Surface Mount
Mounting Type Chassis Mount
Package / Case M115
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature 200°C TJ
Packaging Bulk
Published 2004
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish TIN LEAD
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 10W
Terminal Position RADIAL
Terminal Form FLAT
Pin Count 4
Number of Elements 1
Configuration SINGLE
Case Connection BASE
Output Power 2W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Max Collector Current 250mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 100mA 5V
Collector Emitter Breakdown Voltage 3.5V
Gain 9dB
Current - Collector (Ic) (Max) 250mA
Max Frequency 1.15GHz
Frequency - Transition 1.025GHz~1.15GHz
Collector Base Voltage (VCBO) 45V
Highest Frequency Band L B
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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