MS1226
RoHS
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Package M113
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Trans GP BJT NPN 36V 4.5A 4-Pin Style M113
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Technical Details
Physical
Number of Pins 4
Transistor Element Material SILICON
Package / Case M113
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Technical
Operating Temperature 200°C TJ
Packaging Bulk
Published 1998
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 80W
Terminal Position RADIAL
Terminal Form FLAT
Pin Count 4
Number of Elements 1
Configuration SINGLE
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 36V
Max Collector Current 4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 500mA 5V
Collector Emitter Breakdown Voltage 36V
Gain 18dB
Max Frequency 30MHz
Frequency - Transition 30MHz
Collector Base Voltage (VCBO) 65V
Highest Frequency Band HIGH FREQUENCY B
Collector-Base Capacitance-Max 65pF
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Supply Chain
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 32 Weeks
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