MS1007
RoHS
/
Package M174
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Trans GP BJT NPN 55V 10A 4-Pin Case M174
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Collector-Base Capacitance-Max 220pF
Highest Frequency Band HIGH FREQUENCY B
Collector Base Voltage (VCBO) 110V
Frequency - Transition 30MHz
Max Frequency 30MHz
Gain 14dB
Collector Emitter Breakdown Voltage 55V
DC Current Gain (hFE) (Min) @ Ic, Vce 18 @ 1.4A 6V
Max Collector Current 10A
Collector Emitter Voltage (VCEO) 55V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Output Power 150W
Configuration SINGLE
Number of Elements 1
Pin Count 4
Terminal Form FLAT
Terminal Position RADIAL
Max Power Dissipation 233W
Additional Feature WITH EMITTER BALLASTING RESISTORS
Terminal Finish TIN LEAD
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Published 2003
Packaging Bulk
Operating Temperature 200°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 4
Package / Case M174
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Supply Chain
Lifecycle Status IN PRODUCTION (Last Updated: 2 weeks ago)
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