MRF5812G
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
RF TRANS NPN 15V 5GHZ 8SO
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 500MHz
Collector-Base Capacitance-Max 2pF
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector Base Voltage (VCBO) 30V
Frequency - Transition 5GHz
Transition Frequency 5000MHz
Gain 13dB ~ 15.5dB
Collector Emitter Breakdown Voltage 15V
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA 5V
Max Collector Current 200mA
Collector Emitter Voltage (VCEO) 15V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Power - Max 1.25W
Configuration SINGLE
Number of Elements 1
Pin Count 8
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position DUAL
Max Power Dissipation 1.25W
Subcategory Other Transistors
Terminal Finish MATTE TIN
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2004
Packaging Bulk
Physical
Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Lifecycle Status OBSOLETE (Last Updated: 3 weeks ago)
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