MDS400
RoHS
/
Package 55KT
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Trans GP BJT NPN 55V 40A 3-Pin Case 55KT-1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Highest Frequency Band L B
Frequency - Transition 1.03GHz~1.09GHz
Max Frequency 1.09GHz
Gain 6.5dB
Collector Emitter Breakdown Voltage 55V
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 1A 5V
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 55V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Power - Max 1450W
Configuration SINGLE
Number of Elements 1
JESD-30 Code R-CDFM-F2
Pin Count 2
Terminal Form FLAT
Terminal Position DUAL
Max Power Dissipation 1.45kW
Additional Feature HIGH RELIABILITY
Terminal Finish TIN LEAD
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Packaging Bulk
Operating Temperature 200°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 55
Package / Case 55KT
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
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