1015MP
RoHS
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Package 55FW
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Trans RF BJT NPN 65V 1A 3-Pin Case 55FW
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Technical Details
Supply Chain
Factory Lead Time 22 Weeks
Physical
Contact Plating Tin
Mount Chassis Mount, Surface Mount
Mounting Type Chassis Mount
Package / Case 55FW
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 200°C TJ
Packaging Bulk
Published 2003
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory BIP RF Small Signal
Max Power Dissipation 50W
Terminal Position RADIAL
Terminal Form FLAT
Frequency 1.15GHz
Pin Count 4
JESD-30 Code O-XRDB-F4
Number of Elements 1
Configuration SINGLE
Power Dissipation 50W
Output Power 15W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 100mA 5V
Collector Emitter Breakdown Voltage 65V
Gain 10dB ~ 11dB
Frequency - Transition 1.025GHz~1.15GHz
Emitter Base Voltage (VEBO) 3.5V
Collector-Base Capacitance-Max 7.5pF
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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