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RoHS RoHS compliant
Package 211-07
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description RF TRANS NPN 35V 211-07
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Total Price: USD $35.46
Unit Price: USD $35.464
≥1 USD $35.464
Inventory: 385
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Technical Details

Technical

Element Configuration Single
Power Dissipation 82W
Output Power 30W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 35V
Max Collector Current 3.4A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1.5A 5V
Collector Emitter Breakdown Voltage 35V
Gain 13.5dB
Collector Base Voltage (VCBO) 65V
Emitter Base Voltage (VEBO) 4V
hFE Min 20
Continuous Collector Current 3.4A
Number of Elements 1
Pin Count 4
Frequency 200MHz
Terminal Form FLAT
Terminal Position RADIAL
Max Power Dissipation 82W
Subcategory Other Transistors
Additional Feature HIGH RELIABILITY
Min Operating Temperature -65°C
Max Operating Temperature 150°C
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2009
Packaging Tray

Compliance

Radiation Hardening No
Lead Free Lead Free
RoHS Status ROHS3 Compliant

Physical

Number of Pins 4
Package / Case 211-07
Mounting Type Chassis Mount
Mount Chassis Mount, Screw

Supply Chain

Factory Lead Time 20 Weeks

Alternative Model

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