MAPR-002731-115M00
RoHS
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Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
RF TRANS NPN 65V
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Technical Details
Physical
Mount Chassis Mount
Mounting Type Chassis Mount
Transistor Element Material SILICON
Technical
Operating Temperature 200°C TJ
Packaging Tray
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Power Dissipation 115W
Terminal Position DUAL
Terminal Form FLAT
Pin Count 2
JESD-30 Code R-CDFM-F2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection BASE
Power - Max 115W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Breakdown Voltage 65V
Gain 8.06dB ~ 8.45dB
Highest Frequency Band S B
Compliance
RoHS Status RoHS Compliant
Alternative Model
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