BFG 235 E6327
RoHS
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Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
RF TRANS NPN 15V 5.5GHZ SOT223-4
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Noise Figure (dB Typ @ f) 1.7dB @ 900MHz
Collector-Base Capacitance-Max 3.6pF
Highest Frequency Band L B
Power Dissipation-Max (Abs) 2W
Frequency - Transition 5.5GHz
Transition Frequency 5500MHz
Current - Collector (Ic) (Max) 300mA
Voltage - Collector Emitter Breakdown (Max) 15V
Gain 12.5dB
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 200mA 8V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Power - Max 2W
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN RESISTOR
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position DUAL
Subcategory Other Transistors
Additional Feature BUILT IN EMITTER BALLASTING RESISTOR
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2007
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-261-4, TO-261AA
Mounting Type Surface Mount
Alternative Model
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