BF771E6327HTSA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
RF TRANS NPN 12V 8GHZ SOT23-3
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Buying Options
Total Price: USD $1.6
Unit Price: USD $1.60455
≥1 USD $1.60455
≥10 USD $1.3167
≥100 USD $1.27585
≥500 USD $1.235
≥1000 USD $1.1932
Inventory: 1050
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Noise Figure (dB Typ @ f) 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Emitter Base Voltage (VEBO) 2V
Collector Base Voltage (VCBO) 20V
Transition Frequency 8000MHz
Gain 10dB ~ 15dB
Collector Emitter Breakdown Voltage 12V
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 30mA 8V
Max Collector Current 80mA
Collector Emitter Voltage (VCEO) 12V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Power Dissipation 580mW
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Frequency 8GHz
Current Rating 80mA
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position DUAL
Max Power Dissipation 580mW
Voltage - Rated DC 12V
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Published 2007
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin
Supply Chain
Factory Lead Time 4 Weeks
Alternative Model
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