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RoHS
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Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description Bipolar Transistors - BJT NPN RF
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Buying Options
Total Price: USD $1.27
Unit Price: USD $1.2749
≥1 USD $1.2749
≥10 USD $1.04595
≥100 USD $1.01365
≥500 USD $0.98135
≥1000 USD $0.9481
Inventory: 1238
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant

Dimensions

Width 1.4mm
Length 3.05mm
Height 1mm

Technical

Noise Figure (dB Typ @ f) 4.5dB @ 500MHz
Continuous Collector Current 25mA
hFE Min 70
Emitter Base Voltage (VEBO) 2.5V
Collector Base Voltage (VCBO) 25V
Max Breakdown Voltage 15V
Transition Frequency 1300MHz
Collector Emitter Breakdown Voltage 15V
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA 1V
Max Collector Current 25mA
Collector Emitter Voltage (VCEO) 15V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 1.3 GHz
Transistor Application AMPLIFIER
Power Dissipation 330mW
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Base Part Number BFS17
Frequency 1.3GHz
Current Rating 25mA
Terminal Form GULL WING
Terminal Position DUAL
Max Power Dissipation 330mW
Voltage - Rated DC 15V
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 1996
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 7.994566mg
Number of Pins 3
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount

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