BFQ31ATC
RoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Bipolar Transistors - BJT NPN RF
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Dimensions
Width 1.4mm
Length 3.05mm
Height 1mm
Technical
Noise Figure (dB Typ @ f) 6dB @ 60MHz
Collector-Base Capacitance-Max 1.7pF
Highest Frequency Band ULTRA HIGH FREQUENCY B
Continuous Collector Current 100mA
Emitter Base Voltage (VEBO) 3V
Collector Base Voltage (VCBO) 30V
Transition Frequency 600MHz
Collector Emitter Breakdown Voltage 15V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 3mA 1V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 15V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 600MHz
Transistor Application AMPLIFIER
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G3
Reference Standard CECC
Current Rating 100mA
Reach Compliance Code unknown
Terminal Form GULL WING
Terminal Position DUAL
Max Power Dissipation 330mW
Voltage - Rated DC 15V
HTS Code 8541.21.00.75
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 7.994566mg
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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