MPSH10
RoHS
/
Package TO-92
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Bipolar Transistors - BJT NPN RF Amp/Osc
PDF
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Buying Options
Total Price: USD $0.02
Unit Price: USD $0.01805
≥1 USD $0.01805
≥10 USD $0.0152
≥100 USD $0.01425
≥500 USD $0.01425
≥1000 USD $0.0133
≥10000 USD $0.01235
Inventory: 126405
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Collector-Base Capacitance-Max 0.65pF
hFE Min 60
Emitter Base Voltage (VEBO) 3V
Collector Base Voltage (VCBO) 30V
Collector Emitter Saturation Voltage 500mV
Transition Frequency 650MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA 10V
Max Collector Current 25mA
Collector Emitter Voltage (VCEO) 25V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 650MHz
Transistor Application AMPLIFIER
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-PBCY-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position BOTTOM
Max Power Dissipation 350mW
Subcategory Other Transistors
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Published 2012
Operating Temperature -65°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-92
Mounting Type Through Hole
Supply Chain
Factory Lead Time 3 Weeks
Alternative Model
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