2N5109
RoHS
/
Package TO-39
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
TO-39 Through Hole Single 3 RF Transistor 400mA 1W 11dB 1.2GHz
PDF
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Buying Options
Total Price: USD $26.31
Unit Price: USD $26.3112
≥1 USD $26.3112
≥10 USD $21.58875
≥100 USD $20.91425
≥500 USD $20.23975
≥1000 USD $19.56525
≥3000 USD $17.5408
Inventory: 176
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Collector-Base Capacitance-Max 3.5pF
Highest Frequency Band VERY HIGH FREQUENCY B
Continuous Collector Current 400mA
hFE Min 70
Emitter Base Voltage (VEBO) 3V
Collector Base Voltage (VCBO) 40V
Frequency - Transition 1.2GHz
Power - Output 1W
Collector Emitter Saturation Voltage 500mV
Transition Frequency 1200MHz
Gain 11 dB
Collector Emitter Breakdown Voltage 20V
Max Collector Current 400mA
Collector Emitter Voltage (VCEO) 20V
Gain Bandwidth Product 1.2 GHz
Transistor Application AMPLIFIER
Element Configuration Single
Power Dissipation-Max 1W
Polarity NPN
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-MBCY-W3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form WIRE
Terminal Position BOTTOM
Subcategory Other Transistors
HTS Code 8541.29.00.75
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2011
Physical
Package / Case TO-39
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
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