2N2857
RoHS
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Package TO-72
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
TO-72 Through Hole Single ULTRA HIGH FREQUENCY B RF Transistor 40mA 200mW 1.9GHz 30V
PDF
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Buying Options
Total Price: USD $1.38
Unit Price: USD $1.3832
≥1 USD $1.3832
≥10 USD $1.13525
≥100 USD $1.09915
≥500 USD $1.064
≥1000 USD $1.02885
Inventory: 6310
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Collector-Base Capacitance-Max 1pF
Highest Frequency Band ULTRA HIGH FREQUENCY B
DC Current Gain-Min (hFE) 30
hFE Min 30
Emitter Base Voltage (VEBO) 2.5V
Collector Base Voltage (VCBO) 30V
Frequency - Transition 1.9GHz
Transition Frequency 1000MHz
Collector Emitter Breakdown Voltage 15V
Max Collector Current 40mA
Collector Emitter Voltage (VCEO) 15V
Gain Bandwidth Product 1.9 GHz
Transistor Application AMPLIFIER
Element Configuration Single
Power Dissipation-Max 200mW
Polarity NPN
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-MBCY-W4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form WIRE
Terminal Position BOTTOM
Subcategory Other Transistors
HTS Code 8541.21.00.75
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 4
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2016
Physical
Package / Case TO-72
Mount Through Hole
Supply Chain
Factory Lead Time 12 Weeks
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