NESG2107M33-A
RoHS
/
Package 3-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
RF Bipolar Transistors NPN Amp/Oscillator
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Noise Figure (dB Typ @ f) 0.9dB ~ 1.5dB @ 2GHz
Continuous Collector Current 100mA
Emitter Base Voltage (VEBO) 1.5V
Frequency - Transition 10GHz
Gain 7dB ~ 10dB
Collector Emitter Breakdown Voltage 5V
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 5mA 1V
Max Collector Current 100mA
Transistor Type NPN
Power - Max 130mW
Base Part Number NESG2107
Max Power Dissipation 130mW
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Number of Pins 3
Package / Case 3-SMD, Flat Lead
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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