NESG2046M33-A
RoHS
/
Package 3-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
RF Bipolar Transistors NPN Silicn Germanium Amp/Oscilltr
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Technical Details
Technical
Collector Base Voltage (VCBO) 13V
Emitter Base Voltage (VEBO) 1.5V
hFE Min 140
Continuous Collector Current 40mA
Noise Figure (dB Typ @ f) 0.8dB ~ 1.5dB @ 2GHz
Frequency - Transition 18GHz
Gain 9.5dB ~ 11.5dB
Collector Emitter Breakdown Voltage 5V
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 2mA 1V
Max Collector Current 40mA
Collector Emitter Voltage (VCEO) 5V
Transistor Type NPN
Power Dissipation 130mW
Element Configuration Single
Number of Elements 1
Base Part Number NESG2046
Frequency 2GHz
Max Power Dissipation 130mW
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature 150°C TJ
Compliance
RoHS Status RoHS Compliant
Physical
Number of Pins 3
Package / Case 3-SMD, Flat Lead
Mounting Type Surface Mount
Mount Surface Mount
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