NE97833-A
RoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
RF Bipolar Transistors PNP High Frequency
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Noise Figure (dB Typ @ f) 2dB @ 1GHz
Continuous Collector Current -50mA
hFE Min 40
Emitter Base Voltage (VEBO) -3V
Collector Base Voltage (VCBO) 20V
Current - Collector (Ic) (Max) 50mA
Gain 10dB
Collector Emitter Breakdown Voltage 12V
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 15mA 10V
Max Collector Current 50mA
Collector Emitter Voltage (VCEO) -12V
Transistor Type PNP
Output Power 200mW
Power Dissipation 200mW
Element Configuration Single
Number of Elements 1
Frequency 5.5GHz
Max Power Dissipation 200mW
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Strip
Operating Temperature 150°C TJ
Physical
Weight 200.998119mg
Number of Pins 3
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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