NE856M02-T1-AZ
RoHS
/
Package TO-243AA
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
RF TRANSISTOR NPN SOT-89
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Continuous Collector Current 100mA
hFE Min 250
Emitter Base Voltage (VEBO) 3V
Collector Base Voltage (VCBO) 20V
Max Breakdown Voltage 12V
Gain 12dB
Collector Emitter Breakdown Voltage 12V
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA 10V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 12V
Transistor Type NPN
Output Power 1.2W
Power Dissipation 1.2W
Element Configuration Single
Number of Elements 1
Base Part Number NE856
Frequency 6.5GHz
Max Power Dissipation 1.2W
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Number of Pins 4
Package / Case TO-243AA
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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