NE856M02-AZ
RoHS
/
Package TO-243AA
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
RF TRANS NPN 12V 6.5GHZ SOT89
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Continuous Collector Current 100mA
hFE Min 250
Emitter Base Voltage (VEBO) 3V
Collector Base Voltage (VCBO) 20V
Frequency - Transition 6.5GHz
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 12V
Gain 12dB
Collector Emitter Breakdown Voltage 12V
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA 10V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 12V
Transistor Type NPN
Power - Max 1.2W
Element Configuration Single
Polarity NPN
Base Part Number NE856
Max Power Dissipation 1.2W
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Supplier Device Package SOT-89
Number of Pins 4
Package / Case TO-243AA
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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