NE85639R-T1
RoHS
/
Package SOT-143R
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
TRANS NPN 1GHZ SOT-143R
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-143R
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number NE85639
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA 10V
Collector Emitter Breakdown Voltage 12V
Gain 13.5dB
Transition Frequency 9000MHz
Max Breakdown Voltage 12V
Frequency - Transition 9GHz
Continuous Collector Current 100mA
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 0.9pF
Noise Figure (dB Typ @ f) 1.5dB ~ 2.1dB @ 1GHz
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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