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NE85633-T1B-R23-A

CEL
RoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description RF TRANS NPN 12V 7GHZ SOT23
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Technical Details

Compliance

RoHS Status RoHS Compliant
Radiation Hardening No

Technical

Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Collector Base Voltage (VCBO) 20V
Frequency - Transition 7GHz
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 12V
Gain 11.5dB
Collector Emitter Breakdown Voltage 12V
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA 10V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 12V
Transistor Type NPN
Power - Max 200mW
Base Part Number NE85633
Max Power Dissipation 200mW
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ

Physical

Supplier Device Package SOT-23
Number of Pins 3
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount

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