NE85633-T1B
RoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
TRANS NPN 1GHZ SOT-23
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Noise Figure (dB Typ @ f) 1.4dB ~ 2dB @ 1GHz
Emitter Base Voltage (VEBO) 3V
Collector Base Voltage (VCBO) 20V
Transition Frequency 7000MHz
Current - Collector (Ic) (Max) 100mA
Gain 9dB
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA 10V
Collector Emitter Voltage (VCEO) 12V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Power Dissipation 200mW
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number NE85633
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Frequency 7GHz
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position DUAL
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Cut Tape (CT)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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